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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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FQPF13N50CF Fiches technique(PDF) 1 Page - Fairchild Semiconductor |
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FQPF13N50CF Fiches technique(HTML) 1 Page - Fairchild Semiconductor |
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1 / 10 page  © 2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FQP13N50CF / FQPF13N50CF Rev. A1 May 2006 FRFET TM F QP13N50CF / FQPF13N50CF 500V N-Channel MOSFET Features • 13A, 500V, RDS(on) = 0.54Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 20pF) •Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 100ns) Description These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effi- cient switched mode power supplies and active power factor correction. Absolute Maximum Ratings *Drain current limited by maximum junction temperature Thermal Characteristics TO-220 FDP Series G S D D G S TO-220F FQPF Series GS D Symbol Parameter FQP13N50CF FQPF13N50CF Unit VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25°C) 13 13* A - Continuous (TC = 100°C) 88* A IDM Drain Current - Pulsed (Note 1) 52 52* A VGSS Gate-Source voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 530 mJ IAR Avalanche Current (Note 1) 13 A EAR Repetitive Avalanche Energy (Note 1) 19.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25°C) 195 48 W - Derate above 25 °C1.56 0.39 W/ °C TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 °C Symbol Parameter FQP13N50CF FQPF13N50CF Unit RθJC Thermal Resistance, Junction-to-Case 0.64 2.58 °C/W RθJA Thermal Resistance, Junction-to-Ambient 62.5 62.5 °C/W |
Numéro de pièce similaire - FQPF13N50CF |
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Description similaire - FQPF13N50CF |
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