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FDB8442 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FDB8442 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page FDB8442 Rev. A www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 40 - - V IDSS Zero Gate Voltage Drain Current VDS = 32V VGS = 0V - - 1 µA TJ = 150°C - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VDS = VGS, ID = 250µA 2 2.9 4 V r on) Drain to Source On Resistance ID = 80A, VGS = 10V - 2.1 2.9 m Ω ID = 80A, VGS = 10V, TJ = 175°C - 3.6 5.0 Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 12200 - pF Coss Output Capacitance - 1040 - pF Crss Reverse Transfer Capacitance - 640 - pF RG Gate Resistance VGS = 0.5V, f = 1MHz - 1.0 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V VDD = 20V ID = 80A Ig = 1mA - 181 235 nC Qg(TH) Threshold Gate Charge VGS = 0 to 2V - 23 30 nC Qgs Gate to Source Gate Charge - 49 - nC Qgs2 Gate Charge Threshold to Plateau - 26 - nC Qgd Gate to Drain “Miller” Charge - 41 - nC DS( MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDSS Drain to Source Voltage 40 V VGS Gate to Source Voltage ±20 V ID Drain Current Continuous (TC<158 oC, VGS = 10V) 80 A Drain Current Continuous (Tamb = 25oC, VGS = 10V, with RθJA = 43oC/W) 28 Pulsed See Figure 4 EAS Single Pulse Avalanche Energy (Note 1) 720 mJ PD Power Dissipation 254 W Derate above 25oC1.7 W/oC TJ, TSTG Operating and Storage Temperature -55 to +175 oC RθJC Thermal Resistance Junction to Case 0.59 oC/W RθJA Thermal Resistance Junction to Ambient TO-263, lin2 copper pad area 43 oC/W Device Marking Device Package Reel Size Tape Width Quantity FDB8442 FDB8442 TO-263AB 330mm 24mm 800 units |
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