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FDB8442 Fiches technique(PDF) 3 Page - Fairchild Semiconductor |
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FDB8442 Fiches technique(HTML) 3 Page - Fairchild Semiconductor |
3 / 7 page FDB8442 Rev. A www.fairchildsemi.com 3 Electrical Characteristics T J = 25°C unless otherwise noted Switching Characteristics Drain-Source Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Units t(on) Turn-On Time VDD = 20V, ID = 80A VGS = 10V, RGS = 2Ω -- 62 ns td(on) Turn-On Delay Time - 19.5 - ns tr Turn-On Rise Time - 19.3 - ns td(off) Turn-Off Delay Time - 57 - ns tf Turn-Off Fall Time - 17.2 - ns toff Turn-Off Time - - 118 ns VSD Source to Drain Diode Voltage ISD = 80A - 0.9 1.25 V ISD = 40A - 0.8 1.0 V trr Reverse Recovery Time IF = 75A, di/dt = 100A/µs - 49 64 ns Qrr Reverse Recovery Charge IF = 75A, di/dt = 100A/µs - 70 91 nC Notes: 1: Starting TJ = 25oC, L = 0.35mH, IAS = 64A 2: Pulse width = 100s. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. |
Numéro de pièce similaire - FDB8442 |
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Description similaire - FDB8442 |
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