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HAT2058R Fiches technique(PDF) 2 Page - Renesas Technology Corp

No de pièce HAT2058R
Description  Silicon N Channel Power MOS FET High Speed Power Switching
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2058R Fiches technique(HTML) 2 Page - Renesas Technology Corp

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HAT2058R/HAT2058RJ
2
Absolute Maximum Ratings (Ta = 25
°C)
Ratings
Item
Symbol
HAT2058R
HAT2058RJ
Unit
Drain to source voltage
V
DSS
100
100
V
Gate to source voltage
V
GSS
±20
±20
V
Drain current
I
D
44
A
Drain peak current
I
D (pulse)
Note1
32
32
A
Body-drain diode reverse drain
current
I
DR
44
A
Avalanche current
I
AP
Note4
—4
A
Avalanche energy
E
AR
Note4
1.6
mJ
Channel dissipation
Pch
Note2
22
W
Pch
Note3
33
W
Channel temperature
Tch
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤ 10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤ 10 s
4. Value at Tch = 25
°C, Rg ≥ 50 Ω


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