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MJD44E3 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce MJD44E3
Description  Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MJD44E3 Fiches technique(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector Cutoff Current
(VCE = Rated VCEO, VBE = 0)
ICES
10
mA
Emitter Cutoff Current
(VEB = 7 Vdc)
IEBO
1
mA
ON CHARACTERISTICS
Collector−Emitter Saturation Voltage
(IC = 5 Adc, IB = 10 mAdc)
(IC = 10 Adc, IB = 20 mAdc)
VCE(sat)
1.5
2
Vdc
Base−Emitter Saturation Voltage
(IC = 5 Adc, IB = 10 mAdc)
VBE(sat)
2.5
Vdc
DC Current Gain
(VCE = 5 Vdc, IC = 5 Adc)
hFE
1000
DYNAMIC CHARACTERISTICS
Collector Capacitance
(VCB = 10 Vdc, ftest = 1 MHz)
Ccb
130
pF
SWITCHING TIMES
Delay and Rise Times
(IC = 10 Adc, IB1 = 20 mAdc)
td + tr
0.6
ms
Storage Time
(IC = 10 Adc, IB1 = IB2 = 20 mAdc)
ts
2
ms
Fall Time
(IC = 10 Adc, IB1 = IB2 = 20 mAdc)
tf
0.5
ms
10
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
3
5
10
20
100
5
2
1
0.2
0.1
0.5
50
230
1
Figure 1. Maximum Forward Bias
Safe Operating Area
Figure 2. Power Derating
TC
TA
TC = 25°C SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
25
25
T, TEMPERATURE (°C)
0
50
75
100
125
150
20
15
10
5
2.5
0
2
1.5
1
0.5
TA TC
0.3
3
100 ms
1 ms
5 ms


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