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HAT2167H Fiches technique(PDF) 3 Page - Renesas Technology Corp

No de pièce HAT2167H
Description  Silicon N Channel Power MOS FET Power Switching
Download  8 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2167H Fiches technique(HTML) 3 Page - Renesas Technology Corp

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HAT2167H
Rev.5.00 Sep 20, 2005 page 3 of 7
Main Characteristics
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
50
40
30
20
10
0
2
468
10
50
40
30
20
10
0
12
3
4
5
Tc = 75
°C
25
°C
-25
°C
40
30
20
10
0
50
100
150
200
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
VDS = 10 V
Pulse Test
500
Ta = 25
°C
1 shot Pulse
PW
=
10
m
s
10
µs
100
µs
Operation in
this area is
limited by RDS(on)
DC
Operation
Tc
= 25
°C
1 ms
VGS = 2.2 V
10 V
4.5 V
Pulse Test
2.6 V
2.4 V
2.8 V
3.0 V
10
2
5
1
330
1
10
100
1000
0.3
VGS = 4.5 V
10 V
Pulse Test
500
400
300
200
100
0
4
8
12
16
20
Pulse Test
ID = 50 A
20 A
10 A


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