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HAT2167H Fiches technique(PDF) 1 Page - Renesas Technology Corp

No de pièce HAT2167H
Description  Silicon N Channel Power MOS FET Power Switching
Download  8 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2167H Fiches technique(HTML) 1 Page - Renesas Technology Corp

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Rev.5.00 Sep 20, 2005 page 1 of 7
HAT2167H
Silicon N Channel Power MOS FET
Power Switching
REJ03G0039-0500
Rev.5.00
Sep 20, 2005
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
RDS(on) = 4.2 mtyp. (at VGS = 10 V)
Outline
RENESAS Package code: PTZZ0005DA-A)
(Package name: LFPAK )
1 2
3 4
5
1, 2, 3 Source
4
Gate
5
Drain
G
D
SS S
4
12 3
5
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
40
A
Drain peak current
ID(pulse)
Note1
160
A
Body-drain diode reverse drain current
IDR
40
A
Avalanche current
IAP
Note 2
20
A
Avalanche energy
EAR
Note 2
40
mJ
Channel dissipation
Pch
Note3
20
W
Channel to Case Thermal Resistance
θch-C
6.25
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25
°C, Rg
≥ 50 Ω
3. Tc = 25
°C


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