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2SC5761 Fiches technique(PDF) 1 Page - NEC

No de pièce 2SC5761
Description  NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
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Fabricant  NEC [NEC]
Site Internet  http://www.nec.com/
Logo NEC - NEC

2SC5761 Fiches technique(HTML) 1 Page - NEC

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DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5761
NPN SiGe RF TRANSISTOR FOR
LOW NOISE
⋅ HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
Document No. PU10212EJ02V0DS (2nd edition)
Date Published May 2003 CP(K)
Printed in Japan
The mark
! shows major revised points.
NEC Compound Semiconductor Devices 2001, 2003
FEATURES
• Ideal for low noise
⋅ high-gain amplification
NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
• Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
• SiGe technology (fT = 60 GHz, fmax = 60 GHz)
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5761
50 pcs (Non reel)
• 8 mm wide embossed taping
2SC5761-T2
3 kpcs/reel
• Pin 1 (Emitter), Pin 2 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
8.0
V
Collector to Emitter Voltage
VCEO
2.3
V
Emitter to Base Voltage
VEBO
1.2
V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
80
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy substrate
THERMAL RESISTANCE
Parameter
Symbol
Value
Unit
Junction to Case Resistance
Rth (j-c)
150
°C/W


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