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2SC5761 Fiches technique(PDF) 3 Page - NEC

No de pièce 2SC5761
Description  NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
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Fabricant  NEC [NEC]
Site Internet  http://www.nec.com/
Logo NEC - NEC

2SC5761 Fiches technique(HTML) 3 Page - NEC

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Data Sheet PU10212EJ02V0DS
3
2SC5761
TYPICAL CHARACTERISTICS (TA = +25
°C, unless otherwise specified)
300
250
200
150
100
80
50
0
25
50
75
100
125
150
Ambient Temperature TA (˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy Board
(1.08 cm
2
× 1.0 mm (t) )
f = 1 MHz
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.4
0.3
0.2
0.1
02
6
8
410
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
20
25
30
35
5
10
15
01
2
3
IB = 10 A
µ
190 A
µ
160 A
µ
130 A
µ
100 A
µ
70 A
µ
40 A
µ
1 000
100
10
1
0.1
10
100
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 1 V
1 000
100
10
1
0.1
10
100
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 2 V
VCE = 2 V
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.01
0.001
0.1
0.0001
0.4
0.2
0.0
0.6
0.8
1.0


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