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2SC5761 Fiches technique(PDF) 2 Page - NEC

No de pièce 2SC5761
Description  NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
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Fabricant  NEC [NEC]
Site Internet  http://www.nec.com/
Logo NEC - NEC

2SC5761 Fiches technique(HTML) 2 Page - NEC

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Data Sheet PU10212EJ02V0DS
2
2SC5761
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
−−
200
nA
Emitter Cut-off Current
IEBO
VBE = 0.5 V, IC = 0 mA
−−
200
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 5 mA
200
400
RF Characteristics
Insertion Power Gain
S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz
16.0
18.0
dB
Noise Figure
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz,
ZS = Zopt
0.9
1.1
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
0.17
0.22
pF
Maximum Stable Power Gain
MSG
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz
18.0
20.0
dB
Gain 1 dB Compression Output Power
PO (1 dB)
VCE = 2 V, IC = 20 mA, f = 2 GHz
12.0
dBm
3rd Order Intermodulation Distortion
Output Intercept Point
OIP3
VCE = 2 V, IC = 20 mA, f = 2 GHz
22.0
dBm
Notes 1. Pulse measurement: PW
≤ 350
µs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MSG =
hFE CLASSIFICATION
Rank
FB
Marking
T16
hFE Value
200 to 400
S21
S12


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