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BU2530AW Fiches technique(PDF) 2 Page - NXP Semiconductors |
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BU2530AW Fiches technique(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW STATIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CES Collector cut-off current 2 V BE = 0 V; VCE = VCESMmax - - 1.0 mA I CES V BE = 0 V; VCE = VCESMmax; - - 2.0 mA T j = 125 ˚C I EBO Emitter cut-off current V EB = 7.5 V; IC = 0 A - - 1.0 mA BV EBO Base-emitter breakdown voltage I B = 1 mA 7.5 14 - V V CEsat Collector-emitter saturation voltage I C = 9.0 A; IB = 1.64 A - - 5.0 V V BEsat Base-emitter saturation voltage I C = 9.0 A; IB = 1.64 A 0.825 0.91 1.0 V h FE DC current gain I C = 1 A; VCE = 5 V 9 17 27 h FE I C = 9 A; VCE = 5 V 5.5 8 10 DYNAMIC CHARACTERISTICS T mb = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT Switching times (32 kHz line I Csat = 9.0 A; LC = 200 µH; Cfb = 13 nF; deflection dynamic test circuit). V CC = 138 V; IB(end) = 1.3 A; -I BM = 4.5 A; -VBB = 4 V; LB = 1 µH t s Turn-off storage time 3.5 4.5 µs t f Turn-off fall time 0.14 0.25 µs Fig.1. Switching times waveforms. Fig.2. Switching times definitions. IC IB VCE ICsat IBend 32us 13us 10us t t t TRANSISTOR DIODE ICsat 90 % 10 % tf ts IBend IC IB t t - IBM 2 Measured with half sine-wave voltage (curve tracer). September 1997 2 Rev 1.000 |
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