BU2522DX datasheet(4/7 Pages) PHILIPS

No de pièce	BU2522DX

Description	Silicon Diffused Power Transistor

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Fabricant	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2522DX

Fig.7. Typical collector-emitter saturation voltage.

V

CEsat = f (IC); parameter IC/IB

Fig.8. Typical base-emitter saturation voltage.

V

BEsat = f (IB); parameter IC

Fig.9. Typical collector-emitter saturation voltage.

V

CEsat = f (IB); parameter IC

Fig.10. Typical turn-off losses. T

j = 85˚C

Poff = f (I

B); parameter IC; f = 64 kHz

Fig.11. Typical collector storage and fall time.

ts = f (I

B); tf = f (IB); parameter IC; Tj = 85˚C; f = 64 kHz

Fig.12. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25˚C = f (Ths)

0.1

10

IC / A

VCESAT / V

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

100

1

Tj = 25 C

Tj = 125 C

IC/IB =

4

5

3

0

0.2

0.4 0.6

0.8

1

1.2 1.4

1.6

1.8

2

IB / A

Poff / W

BU2522AF

100

10

1

IC =

6A

5A

0

1

2

3

4

IB / A

VBESAT / V

1.2

1.1

1.0

0.9

0.8

0.7

0.6

Tj = 25 C

Tj = 125 C

IC=

8 A

6 A

5 A

4 A

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

IB / A

ts, tf / us

BU2522AF

4

3.5

3

2.5

2

1.5

1

0.5

0

IC =

6A

5A

0.1

1

10

IB / A

VCESAT / V

10

1

0.1

Tj = 25 C

Tj = 125 C

IC = 4 A

5 A

6 A

8 A

0

20

40

60

80

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

90

80

70

60

50

40

30

20

10

0

with heatsink compound

September 1997

4

Rev 1.200

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