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HAT2160H Fiches technique(PDF) 3 Page - Renesas Technology Corp

No de pièce HAT2160H
Description  Silicon N Channel Power MOS FET Power Switching
Download  8 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2160H Fiches technique(HTML) 3 Page - Renesas Technology Corp

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HAT2160H
Rev.3.00 Sep 26, 2005 page 3 of 7
Main Characteristics
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Transfer Characteristics
Drain to Source Voltage
VDS
(V)
Maximum Safe Operation Area
Case Temperature
Tc (
°C)
Power vs. Temperature Derating
Gate to Source Voltage
VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain Current
ID (A)
Static Drain to Source on State Resistance
vs. Drain Current
100
80
60
40
20
0
2
468
10
100
80
60
40
20
0
12
3
4
5
Tc = 75
°C
25
°C
-25
°C
40
30
20
10
0
50
100
150
200
VDS = 10 V
Pulse Test
VGS = 2.4 V
10 V
4.5 V
2.6 V
2.8 V
3.0 V
3.2 V
Pulse Test
100
10
1
0.1
0.01
0.1
0.3
1
3
10
30
100
500
Tc = 25
°C
1 shot Pulse
PW
= 10
ms
10
µs
100
µs
Operation in
this area is
limited by RDS(on)
DC
Operat
ion
1 ms
250
200
150
100
50
0
4
8
12
16
20
Pulse Test
ID = 50 A
10 A
20 A
10
2
5
1
30
300
1
10
100
1000
3
VGS = 4.5 V
10 V
Pulse Test


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