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BU2508A Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce BU2508A
Description  Silicon Diffused Power Transistor
Download  7 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BU2508A Fiches technique(HTML) 3 Page - NXP Semiconductors

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508A
Fig.3. Switching times waveforms.
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit (BU2508A).
Fig.6. Typical DC current gain. h
FE = f (IC)
parameter V
CE
Fig.7. Typical base-emitter saturation voltage.
V
BEsat = f (IC); parameter IC/IB
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat = f (IC); parameter IC/IB
IC
IB
VCE
ICM
IBend
64us
26us
20us
t
t
t
BU2508A
DIODE
0.01
1
100
10
1
0.1
10
h
IC / A
FE
Tj = 25 C
Tj = 125 C
5V
1V
ICM
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
0.1
1
10
IC / A
VBESAT / V
BU2508A
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
3
4
5
IC/IB=
+ 150 v nominal
adjust for ICM
1mH
BY228
12nF
BU2508A
LB
IBend
-VBB
0.1
1
10
IC / A
VCESAT / V
BU2508A
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Tj = 25 C
Tj = 125 C
5
4
3
IC/IB=
November 1995
3
Rev 1.300


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