Moteur de recherche de fiches techniques de composants électroniques
  French  ▼
ALLDATASHEET.FR

X  

KM641003C-20 Fiches technique(PDF) 7 Page - Samsung semiconductor

No de pièce KM641003C-20
Description  256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating)
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM641003C-20 Fiches technique(HTML) 7 Page - Samsung semiconductor

  KM641003C-20 Datasheet HTML 1Page - Samsung semiconductor KM641003C-20 Datasheet HTML 2Page - Samsung semiconductor KM641003C-20 Datasheet HTML 3Page - Samsung semiconductor KM641003C-20 Datasheet HTML 4Page - Samsung semiconductor KM641003C-20 Datasheet HTML 5Page - Samsung semiconductor KM641003C-20 Datasheet HTML 6Page - Samsung semiconductor KM641003C-20 Datasheet HTML 7Page - Samsung semiconductor KM641003C-20 Datasheet HTML 8Page - Samsung semiconductor  
Zoom Inzoom in Zoom Outzoom out
 7 / 8 page
background image
KM641003C
PRELIMINARY
Revision 1.0
- 7 -
March 1999
CCPCCCRCELIMINARY
Preliminary
CMOS SRAM
PRELIMINARY
NOTES(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ;
A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write to the end of
write.
3. tCW is measured from the later of CS going low to end of write.
4. tAS is measured from the address valid to the beginning of write.
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10.When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
TIMING WAVEFORM OF WRITE CYCLE(3) (CS=Controlled)
Address
CS
tAW
tDW
tDH
Valid Data
WE
Data in
Data out
High-Z
High-Z(8)
tCW(3)
tWP(2)
tAS(4)
tWC
tWR(5)
High-Z
High-Z
tLZ
tWHZ(6)
FUNCTIONAL DESCRIPTION
* X means Don
t Care.
CS
WE
OE
Mode
I/O Pin
Supply Current
H
X
X*
Not Select
High-Z
ISB, ISB1
L
H
H
Output Disable
High-Z
ICC
L
H
L
Read
DOUT
ICC
L
L
X
Write
DIN
ICC


Numéro de pièce similaire - KM641003C-20

FabricantNo de pièceFiches techniqueDescription
logo
Samsung semiconductor
KM641003A SAMSUNG-KM641003A Datasheet
123Kb / 8P
   256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range
KM641003A-12 SAMSUNG-KM641003A-12 Datasheet
123Kb / 8P
   256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range
KM641003A-15 SAMSUNG-KM641003A-15 Datasheet
123Kb / 8P
   256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range
KM641003A-20 SAMSUNG-KM641003A-20 Datasheet
123Kb / 8P
   256Kx4 High Speed Static RAM(5V Operating), Revolutionary Pin out Operated at Commercial and Industrial Temperature Range
KM641003B SAMSUNG-KM641003B Datasheet
130Kb / 8P
   256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
More results

Description similaire - KM641003C-20

FabricantNo de pièceFiches techniqueDescription
logo
Samsung semiconductor
K6R1004C1C SAMSUNG-K6R1004C1C Datasheet
101Kb / 9P
   256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004C1D SAMSUNG-K6R1004C1D Datasheet
188Kb / 9P
   256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
K6R1004V1C-C SAMSUNG-K6R1004V1C-C Datasheet
137Kb / 9P
   256Kx4 Bit (with OE) High-Speed CMOS Static RAM(3.3V Operating).
K6R1004C1B SAMSUNG-K6R1004C1B Datasheet
128Kb / 8P
   256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
KM641003B SAMSUNG-KM641003B Datasheet
130Kb / 8P
   256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
K6E1004C1B SAMSUNG-K6E1004C1B Datasheet
134Kb / 9P
   256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out
KM641001B SAMSUNG-KM641001B Datasheet
134Kb / 9P
   256Kx4 Bit (with OE) High Speed Static RAM(5V Operating), Evolutionary Pin out
K6R1016C1C SAMSUNG-K6R1016C1C Datasheet
190Kb / 11P
   64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).
K6R4004C1D SAMSUNG-K6R4004C1D Datasheet
223Kb / 9P
   1Mx4 Bit High Speed Static RAM(5.0V Operating)
K6R4008C1D SAMSUNG-K6R4008C1D Datasheet
245Kb / 10P
   512Kx8 Bit High Speed Static RAM(5.0V Operating)
More results


Html Pages

1 2 3 4 5 6 7 8


Fiches technique Télécharger

Go To PDF Page


Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com