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GFB75N03 Fiches technique(PDF) 1 Page - General Semiconductor

No de pièce GFB75N03
Description  N-Channel Enhancement-Mode MOSFET
Download  5 Pages
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Fabricant  GE [General Semiconductor]
Site Internet  http://www.vishay.com
Logo GE - General Semiconductor

GFB75N03 Fiches technique(HTML) 1 Page - General Semiconductor

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Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
Continuous Drain Current(1)
ID
80
A
Pulsed Drain Current
IDM
240
Maximum Power Dissipation
TA = 25°C
PD
69.4
W
TA = 100°C
27.8
Operating Junction and Storage Temperature Range
TJ, Tstg
–55 to 150
°C
Lead Temperature (1/8” from case for 5 sec.)
TL
275
°C
Junction-to-Case Thermal Resistance
R
θJC
1.8
°C/W
Junction-to-Ambient Thermal Resistance(2)
R
θJA
40
°C/W
Notes: (1) Maximum DC current limited by the package
(2) 1-in2 2oz. Cu PCB mounted
GFB75N03
N-Channel Enhancement-Mode MOSFET
VDS 30V RDS(ON) 6.5m
Ω ID 80A
5/1/01
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Low Voltage DC/DC Converters
• Fast Switching for High Efficiency
Mechanical Data
Case: JEDEC TO-263 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any
Weight: 1.3g
0.380 (9.65)
0.420 (10.67)
0.320 (8.13)
0.360 (9.14)
0.575 (14.60)
0.625 (15.88)
0.21 (5.33)
Min.
D
-T-
Seating Plate
0.027 (0.686)
0.037 (0.940)
0.096 (2.43)
0.102 (2.59)
GD
S
PIN
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
0.120 (3.05)
0.155 (3.94)
0.055 (1.39)
0.066 (1.68)
0.014 (0.35)
0.020 (0.51)
0.100 (2.54)
0.130 (3.30)
G
D
S
TO-263AB
Dimensions in inches
and (millimeters)
0.08
(2.032)
0.24
(6.096)
0.42
(10.66)
0.63
(17.02)
0.12
(3.05)
0.33
(8.38)
Mounting Pad
Layout
New
Product
TRENCH
GEN
FET
®


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