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2SK3604-01L Fiches technique(PDF) 1 Page - Fuji Electric

No de pièce 2SK3604-01L
Description  N-CHANNEL SILICON POWER MOSFET
Download  4 Pages
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Fabricant  FUJI [Fuji Electric]
Site Internet  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK3604-01L Fiches technique(HTML) 1 Page - Fuji Electric

  2SK3604-01L Datasheet HTML 1Page - Fuji Electric 2SK3604-01L Datasheet HTML 2Page - Fuji Electric 2SK3604-01L Datasheet HTML 3Page - Fuji Electric 2SK3604-01L Datasheet HTML 4Page - Fuji Electric  
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1
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
150
VDSX *5
120
Continuous drain current
ID
±23
Pulsed drain current
ID(puls]
±92
Gate-source voltage
VGS
±30
Non-repetitive Avalanche current
IAS *2
23
Maximum Avalanche Energy
EAS *1
130.9
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
Ta=25°C
1.67
Tc=25°C
105
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3604-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=150V VGS=0V
VDS=120V VGS=0V
VGS=±30V
ID=8A
VGS=10V
ID=8A
VDS=25V
VCC=48V ID=8A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
V
µA
nA
m
S
pF
nC
A
V
µs
µC
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
1.191
75.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA
VGS=0V
ID= 250µA
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=75V
VGS=0V
f=1MHz
VCC=75V
ID=16A
VGS=10V
L=363µH Tch=25°C
IF=16A VGS=0V Tch=25°C
IF=16A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
150
3.0
5.0
25
250
10
100
79
105
612
760
1140
130
195
69
12
18
2.8
4.2
22
33
6.2
9.3
21
31.5
9
13.5
69
23
1.10
1.65
0.13
0.59
-55 to +150
Outline Drawings (mm)
P4
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<
=
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=
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*4 VDS
150V
<
=
www.fujielectric.co.jp/denshi/scd
*5 VGS=-30V
200304
*1 L=363µH, Vcc=48V, Tch=25°C, See to Avalanche Energy Graph
*2 Tch 150
=
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