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2SK3526-01L Fiches technique(PDF) 1 Page - Fuji Electric

No de pièce 2SK3526-01L
Description  N-CHANNEL SILICON POWER MOSFET
Download  4 Pages
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Fabricant  FUJI [Fuji Electric]
Site Internet  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

2SK3526-01L Fiches technique(HTML) 1 Page - Fuji Electric

  2SK3526-01L Datasheet HTML 1Page - Fuji Electric 2SK3526-01L Datasheet HTML 2Page - Fuji Electric 2SK3526-01L Datasheet HTML 3Page - Fuji Electric 2SK3526-01L Datasheet HTML 4Page - Fuji Electric  
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1
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
600
Continuous drain current
ID
±8
Pulsed drain current
ID(puls]
±32
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR
*2
8
Maximum Avalanche Energy
EAS
*1
145.6
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt
*3
5
Max. power dissipation
PD
Ta=25°C
1.67
Tc=25°C
135
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3526-01L,S,SJ
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=3A
VGS=10V
ID=3A
VDS=25V
VCC=300V ID=3A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
V
µA
nA
S
pF
nC
A
V
µs
µC
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.926
75.0
°C/W
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250µA
VGS=0V
ID= 250µA
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=6A
VGS=10V
L=4.2mH Tch=25°C
IF=6A VGS=0V Tch=25°C
IF=6A VGS=0V
-di/dt=100A/µs
Tch=25°C
V
A
A
V
A
mJ
kV/µs
kV/µs
W
°C
°C
600
3.0
5.0
25
250
10
100
0.93
1.20
36
750
1130
100
150
4.0
6.0
14
21
914
24
36
7
10.5
20
30
8.5
13
5.5
8.5
8
1.00
1.50
0.7
3.5
-55 to +150
Outline Drawings [mm]
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
*3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C
=
<
=
<
=
<
*4 VDS 600V
<
=
P4
200304
*1 L=4.2mH, Vcc=60V, See to Avalanche Energy Graph
*2 Tch 150°C
=
<


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