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2SK3526-01L Fiches technique(PDF) 1 Page - Fuji Electric |
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2SK3526-01L Fiches technique(HTML) 1 Page - Fuji Electric |
1 / 4 page 1 Item Symbol Ratings Unit Drain-source voltage VDS 600 Continuous drain current ID ±8 Pulsed drain current ID(puls] ±32 Gate-source voltage VGS ±30 Repetitive or non-repetitive IAR *2 8 Maximum Avalanche Energy EAS *1 145.6 Maximum Drain-Source dV/dt dVDS/dt *4 20 Peak Diode Recovery dV/dt dV/dt *3 5 Max. power dissipation PD Ta=25°C 1.67 Tc=25°C 135 Operating and storage Tch +150 temperature range Tstg Electrical characteristics (Tc =25°C unless otherwise specified) Thermalcharacteristics 2SK3526-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Test Conditions Zero gate voltage drain current IDSS VDS=600V VGS=0V VDS=480V VGS=0V VGS=±30V ID=3A VGS=10V ID=3A VDS=25V VCC=300V ID=3A VGS=10V RGS=10 Ω Min. Typ. Max. Units V V µA nA Ω S pF nC A V µs µC ns Min. Typ. Max. Units Thermal resistance Rth(ch-c) channel to case Rth(ch-a) channel to ambient 0.926 75.0 °C/W °C/W Symbol V(BR)DSS VGS(th) IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Item Drain-source breakdown voltaget Gate threshold voltage Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C Tch=125°C VDS=0V VDS=25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V L=4.2mH Tch=25°C IF=6A VGS=0V Tch=25°C IF=6A VGS=0V -di/dt=100A/µs Tch=25°C V A A V A mJ kV/µs kV/µs W °C °C 600 3.0 5.0 25 250 10 100 0.93 1.20 36 750 1130 100 150 4.0 6.0 14 21 914 24 36 7 10.5 20 30 8.5 13 5.5 8.5 8 1.00 1.50 0.7 3.5 -55 to +150 Outline Drawings [mm] Gate(G) Source(S) Drain(D) Super FAP-G Series *3 IF -ID, -di/dt=50A/µs, Vcc BVDSS, Tch 150°C = < = < = < *4 VDS 600V < = P4 200304 *1 L=4.2mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch 150°C = < |
Numéro de pièce similaire - 2SK3526-01L |
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Description similaire - 2SK3526-01L |
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