 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
IRF7421D1 Fiches technique(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF7421D1 Fiches technique(HTML) 2 Page - International Rectifier |
|
|
2 / 8 page  IRF7421D1 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ––– ––– 0.035 VGS = 10V, ID = 4.1A ––– ––– 0.060 VGS = 4.5V, ID = 2.1A VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 4.6 ––– ––– S VDS = 15V, ID = 2.1A ––– ––– 1.0 VDS = 24V, VGS = 0V ––– ––– 25 VDS = 24V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -20V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 20V Qg Total Gate Charge ––– 18 27 ID = 4.1A Qgs Gate-to-Source Charge ––– 2.2 3.3 nC VDS = 24V Qgd Gate-to-Drain ("Miller") Charge ––– 5.9 8.9 VGS = 10V, See Fig. 6 and 9 td(on) Turn-On Delay Time ––– 6.7 ––– VDD = 15V tr Rise Time ––– 27 ––– ID = 4.1A td(off) Turn-Off Delay Time ––– 20 ––– RG = 6.2 Ω tf Fall Time ––– 16 ––– RD = 3.7 Ω, See Fig. 10 Ciss Input Capacitance ––– 510 ––– VGS = 0V Coss Output Capacitance ––– 200 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 84 ––– ƒ = 1.0MHz, See Fig. 5 RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current IGSS Ω µA nA ns Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current(Body Diode) ––– ––– 1.3 ISM Pulsed Source Current (Body Diode) ––– ––– 33 VSD Body Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 4.1A, VGS = 0V trr Reverse Recovery Time (Body Diode) ––– 57 86 ns TJ = 25°C, IF = 4.1A Qrr Reverse RecoveryCharge ––– 93 140 nC di/dt = 100A/µs A MOSFET Source-Drain Ratings and Characteristics Parameter Max. Units. Conditions If (av) Max. Average Forward Current 2.0 50% Duty Cycle. Rectangular Wave, Tc = 132°C 4.0 50% Duty Cycle. Rectangular Wave, Tc = 117°C ISM Max. peak one cycle Non-repetitive 150 5µs sine or 3µs Rect. pulse Following any rated Surge current 15 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied A A Schottky Diode Maximum Ratings Parameter Max. Units Conditions Vfm Max. Forward voltage drop 0.50 If = 1.0, Tj = 25°C 0.60 If = 2.0, Tj = 25°C 0.42 If = 1.0, Tj = 125°C 0.55 If = 2.0, Tj = 125°C . Irm Max. Reverse Leakage current 0.10 Vr = 30V Tj = 25°C 15 Tj = 125°C Ct Max. Junction Capacitance 100 pF Vr = 5Vdc ( 100kHz to 1 MHz) 25°C dv/dt Max. Voltage Rate of Charge 5200 V/ µs Rated Vr Schottky Diode Electrical Specifications V mA |
Numéro de pièce similaire - IRF7421D1 |
|
Description similaire - IRF7421D1 |
|
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
