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IRHNA3160 Fiches technique(PDF) 3 Page - International Rectifier

No de pièce IRHNA3160
Description  RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRHNA3160 Fiches technique(HTML) 3 Page - International Rectifier

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3
Pre-Irradiation
IRHNA7160
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100KRads(Si)1
600 to 1000K Rads (Si)2
Units
Test Conditions
Min
Max
Min
Max
BVDSS
Drain-to-Source Breakdown Voltage
100
100
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate Threshold Voltage
2.0
4.0
1.25
4.5
VGS = VDS, ID = 1.0mA
IGSS
Gate-to-Source Leakage Forward
100
100
nA
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
-100
VGS = -20 V
IDSS
Zero Gate Voltage Drain Current
25
50
µA
VDS=80V, VGS =0V
RDS(on)
Static Drain-to-Source
0.045
0.062
VGS = 12V, ID =32.5A
On-State Resistance (TO-3)
RDS(on)
Static Drain-to-Source
0.04
0.057
VGS = 12V, ID =32.5A
On-State Resistance (SMD-2)
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Radiation Characteristics
1. Part number IRHNA7160 (JANSR2N7432U)
2. Part numbers IRHNA3160 (JANSF2N7432U), IRHNA4160 (JANSG2N7432U) and IRHNA8160 (JANSH2N7432U)
Fig a. Single Event Effect, Safe Operating Area
VSD
Diode Forward Voltage
1.8
1.8
V
VGS = 0V, IS = 51A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For footnotes refer to the last page
Ion
LET
Energy
Range
VDS(V)
MeV/(mg/cm2))
(MeV)
(µm)
@
VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
28
285
43
100
100
100
80
60
Br
36.8
305
39
100
90
70
50
0
20
40
60
80
100
120
0
-5
-10
-15
-20
-25
VGS
Cu
Br


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