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IRHNA3160 Fiches technique(PDF) 2 Page - International Rectifier

No de pièce IRHNA3160
Description  RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)
Download  8 Pages
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Fabricant  IRF [International Rectifier]
Site Internet  http://www.irf.com
Logo IRF - International Rectifier

IRHNA3160 Fiches technique(HTML) 2 Page - International Rectifier

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IRHNA7160
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100
V
VGS =0 V, ID = 1.0mA
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
0.11
V/°C
Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source
0.040
VGS = 12V, ID = 32.5A
On-State Resistance
0.045
VGS = 12V, ID = 51A
VGS(th)
Gate Threshold Voltage
2.0
4.0
V
VDS = VGS, ID = 1.0mA
gfs
Forward Transconductance
16
S ( )VDS > 15V, IDS = 32.5A „
IDSS
Zero Gate Voltage Drain Current
25
VDS= 80V,VGS=0V
250
VDS = 80V
VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Leakage Forward
100
VGS = 20V
IGSS
Gate-to-Source Leakage Reverse
-100
VGS = -20V
Qg
Total Gate Charge
310
VGS = 12V, ID = 51A
Qgs
Gate-to-Source Charge
53
nC
VDS = 50V
Qgd
Gate-to-Drain (‘Miller’) Charge
110
td(on)
Turn-On Delay Time
35
VDD = 50V, ID = 51A,
tr
Rise Time
150
RG = 2.35Ω
td(off)
Turn-Off Delay Time
150
tf
Fall Time
200
LS + LD
Total Inductance
4.0
Ciss
Input Capacitance
5300
VGS = 0V, VDS = 25V
Coss
Output Capacitance
1600
pF
f = 1.0MHz
Crss
Reverse Transfer Capacitance
350
nA
„
nH
ns
µA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
Junction-to-Case
0.42
RthJPCB
Junction-to-PC Board
1.6
Solder to a 1” sq. copper clad PC Board
°C/W
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS
Continuous Source Current (Body Diode)
51
ISM
Pulse Source Current (Body Diode) ➀
204
VSD
Diode Forward Voltage
1.8
V
Tj = 25°C, IS = 51A, VGS = 0V ➃
trr
Reverse Recovery Time
520
nS
Tj = 25°C, IF = 51A, di/dt ≥ 100A/µs
QRR Reverse Recovery Charge
6.5
µC
VDD ≤ 25V ➃
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
Measured from center of drain
pad to center of source pad


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