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HAT3010R Fiches technique(PDF) 4 Page - Renesas Technology Corp

No de pièce HAT3010R
Description  Silicon N/P Channel Power MOS FET High Speed Power Switching
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT3010R Fiches technique(HTML) 4 Page - Renesas Technology Corp

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HAT3010R
Rev.8, Aug. 2002, page 2 of 14
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Nch
Pch
Drain to source voltage
V
DSS
60
–60
V
Gate to source voltage
V
GSS
±20
±20
V
Drain current
I
D
6
–5
A
Drain peak current
I
D(pulse)
Note1
48
–40
A
Body-drain diode reverse drain current
I
DR
6
–5
A
Channel dissipation
Pch
Note2
2
2
W
Channel dissipation
Pch
Note3
3
3
W
Channel temperature
Tch
150
150
°C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤ 10 s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW
≤ 10 s


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