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BUF642 Fiches technique(PDF) 2 Page - Vishay Siliconix |
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BUF642 Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 8 page BUF642 Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 2, 20–Jan–99 2 (8) Document Number 86511 Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Collector cut-off current VCES = 900 V ICES 50 mA VCES = 900 V; Tcase = 150°C ICES 200 mA VCEO = 400 V ICEO 100 mA Collector-emitter breakdown voltage (figure 1) IC = 500 mA; L = 125 mH; Imeasure = 100 mA V(BR)CEO 400 V Emitter-base breakdown voltage IE = 1 mA V(BR)EBO 9 V Collector-emitter IC = 1 A; IB = 0.25 A VCEsat 0.5 V saturation voltage IC = 3 A; IB = 1 A VCEsat 1 V Base-emitter saturation voltage IC = 1 A; IB = 0.25 A VBEsat 1 V g IC = 3 A; IB = 1 A VBEsat 1.5 V DC forward current transfer ratio VCE = 2 V; IC = 10 mA hFE 15 VCE = 2 V; IC = 1 A hFE 15 VCE = 2 V; IC = 3 A hFE 8 VCE = 2 V; IC = 6 A hFE 4 Collector-emitter working voltage VS = 50 V; L = 1 mH; IC = 2.5 A; IB1 = 0.5 A; –IB2 = 0.5 A; –VBE(off) = 5 V VCEW 550 V |
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