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BAS16H Fiches technique(PDF) 1 Page - NXP Semiconductors |
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BAS16H Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 10 page 1. Product profile 1.1 General description The BAS16H is a high-speed switching diode fabricated in planar technology, and encapsulated in a SOD123F small and flat plastic package. 1.2 Features s High switching speed: max. 4 ns s Continuous reverse voltage: max. 100 V s Repetitive peak reverse voltage: max. 100 V s Repetitive peak forward current: max. 500 mA s Small and flat plastic package 1.3 Applications s High-speed switching in hybrid thick and thin-film circuits s Mobile communication s Digital (still) cameras s Personal Digital Assistants (PDA) s Personal Computer Memory Card International Association (PCMCIA) cards 1.4 Quick reference data [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAS16H High-speed switching diode in SOD123F package Rev. 01 — 15 April 2005 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VR reverse voltage - - 100 V IFRM repetitive peak forward current - - 500 mA trr reverse recovery time [1] --4 ns |
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