NUS5530MN datasheet(3/9 Pages) ONSEMI

No de pièce	NUS5530MN

Description	Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor

Download	9 Pages

Scroll/Zoom	100%

Fabricant	ONSEMI [ON Semiconductor]

Site Internet	http://www.onsemi.com

Logo

3 / 9 page

NUS5530MN

http://onsemi.com

3

ELECTRICAL CHARACTERISTICS FOR P−CHANNEL FET (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 mA

−0.6

−1.2

V

Gate−Body Leakage

IGSS

VDS = 0 V, VGS = "12 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −16 V, VGS = 0 V

−1.0

mA

VDS = −16 V, VGS = 0 V,

TJ = 85°C

−5.0

On−State Drain Current (Note 5)

ID(on)

VDS v −5.0 V, VGS = −4.5 V

−20

A

Drain−Source On−State Resistance (Note 5)

rDS(on)

VGS = −3.6 V, ID = −1.0 A

−

0.050

0.06

W

VGS = −2.5 V, ID = −1.0 A

0.070

0.083

Forward Transconductance (Note 5)

gfs

VDS = −10 V, ID = −3.9 A

12

Mhos

Diode Forward Voltage (Note 5)

VSD

IS = −2.1 A, VGS = 0 V

−0.8

−1.2

V

Dynamic (Note 6)

Total Gate Charge

QG

VDS = −10 V, VGS = −4.5 V,

ID = −3.9 A

9.7

22

nC

Gate−Source Charge

QGS

1.2

Gate−Drain Charge

QGD

3.6

Input Capacitance

Ciss

VDS = −5.0 Vdc, VGS = 0 Vdc,

f = 1.0 MHz

710

pF

Output Capacitance

Coss

400

Reverse Transfer Capacitance

Crss

140

Turn−On Delay Time

td(on)

VDD = −10 V, RL = 10 W

ID ^ −1.0 A, VGEN = −4.5 V,

RG = 6 W

14

30

ns

Rise Time

tr

22

55

Turn−Off Delay Time

td(off)

42

100

Fall Time

tf

35

70

Source−Drain Reverse Recovery Time

trr

IF = −1.1 A, di/dt = 100 A/ms

30

60

4. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).

5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

6. Guaranteed by design, not subject to production testing.

Numéro de pièce similaire - NUS5530MN

Fabricant	No de pièce	Fiches technique	Description
ON Semiconductor	NUS5531MT	150Kb / 10P	Main Switch Power MOSFET and Single Charging BJT July, 2008 ??Rev. 1
ON Semiconductor	NUS5531MTR2G	150Kb / 10P	Main Switch Power MOSFET and Single Charging BJT July, 2008 ??Rev. 1

More results

Description similaire - NUS5530MN

Fabricant	No de pièce	Fiches technique	Description
KODENSHI_AUK CORP.	SUM202MN	374Kb / 9P	Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor
Taiwan Semiconductor Co...	TSB1184	45Kb / 3P	Low Vce(sat) PNP Transistor
Pan Jit International I...	PBHV9110DW	408Kb / 6P	PNP Low Vce(sat) Transistor January 18,2019-REV.00
	2SB1429	313Kb / 5P	PNP Low Vce(sat) Transistor November 4,2016-REV.00
	PBHV9110DW-AU	408Kb / 6P	PNP Low Vce(sat) Transistor January 18,2019-REV.00
Taiwan Semiconductor Co...	TSB1424A	71Kb / 3P	Low Vce(sat) PNP Transistor
Pan Jit International I...	PBHV9110DH-AU	404Kb / 6P	PNP Low Vce(sat) Transistor January 18,2019-REV.00
Taiwan Semiconductor Co...	TSB772	49Kb / 3P	Low Vce(sat) PNP Transistor
Pan Jit International I...	2SB1427W6	227Kb / 5P	PNP Low Vce(sat) Transistor
Pan Jit International I...	PBHV9110DA-AU	413Kb / 6P	PNP Low Vce(sat) Transistor August 16,2019-REV.00

More results

NUS5530MN Fiches technique(PDF) 3 Page - ON Semiconductor

NUS5530MN Fiches technique(HTML) 3 Page - ON Semiconductor

Numéro de pièce similaire - NUS5530MN

Description similaire - NUS5530MN

Html Pages

1 2 3 4 5 6 7 8 9

Fiches technique Télécharger

Lien URL