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NUP4304MR6 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce NUP4304MR6
Description  Low Capacitance Diode Array for ESD Protection in Four Data Lines
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NUP4304MR6 Fiches technique(HTML) 2 Page - ON Semiconductor

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NUP4304MR6
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance Junction−to−Ambient
RqJA
556
°C/W
Lead Solder Temperature
Maximum 10 Seconds Duration
TL
260
°C
Junction Temperature
TJ
−40 to +85
°C
Storage Temperature
Tstg
−55 to +150
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 mA)
V(BR)
70
Vdc
Reverse Voltage Leakage Current
(VR = 70 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR
2.5
30
50
mAdc
Capacitance (between I/O pins)
(VR = 0 V, f = 1.0 MHz)
CD
0.8
1.5
pF
Capacitance (between I/O pin and ground)
(VR = 0 V, f = 1.0 MHz)
CD
1.6
3
pF
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
715
855
1000
1250
mVdc
1. FR−5 = 1.0
 0.75  0.062 in.
2. Alumina = 0.4
 0.3  0.024 in. 99.5% alumina.


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