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NUP45V6P5 Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce NUP45V6P5
Description  Low Capacitance Quad Array for ESD Protection
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NUP45V6P5 Fiches technique(HTML) 2 Page - ON Semiconductor

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NUP45V6P5 Series
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2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
QVBR
Maximum Temperature Coefficient of VBR
IF
Forward Current
VF
Forward Voltage @ IF
ZZT
Maximum Zener Impedance @ IZT
IZK
Reverse Current
ZZK
Maximum Zener Impedance @ IZK
Uni−Directional
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (8 X 20
ms @ TA = 25°C) (Note 1)
NUP45V6P5
NUP46V8P5
NUP412VP5
PPK
14
30
65
W
Thermal Resistance Junction−to−Ambient
Above 25
°C, Derate
RqJA
560
4.5
°C/W
mW/
°C
Maximum Junction Temperature
TJmax
150
°C
Operating Junction and Storage Temperature Range
TJ Tstg
−55 to +150
°C
Lead Solder Temperature (10 seconds duration)
TL
260
°C
Human Body Model (HBM)
Machine Model (MM)
IEC61000−4−2 Air (ESD)
IEC61000−4−2 Contact (ESD)
ESD
16000
400
15000
8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Device
Device
Marking
Breakdown Voltage
VBR @ 1 mA (Volts)
Leakage Current
IRM @ VRM
Typ Capacitance
@ 0 V Bias (pF)
(Note 2)
Typ Capacitance
@ 3 V Bias (pF)
(Note 2)
Min
Nom
Max
VRWM
IRWM (mA)
Typ
Max
Typ
Max
NUP45V6P5
5
5.3
5.6
5.9
3.0
1.0
13
17
7.0
11.5
NUP46V8P5
6
6.47
6.8
7.14
4.3
1.0
12
15
6.7
9.5
NUP412VP5
2
11.4
12
12.7
9.0
0.5
6.5
10
3.5
5.0
1. Non−repetitive current per Figure 1.
2. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C


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