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NTLJS4114N Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce NTLJS4114N
Description  Power MOSFET 30 V, 7.8 A, uCool Single N−Channel, 2x2 mm WDFN Package
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTLJS4114N Fiches technique(HTML) 2 Page - ON Semiconductor

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NTLJS4114N
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2
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 3)
RqJA
65
°C/W
Junction−to−Ambient – t
≤ 5 s (Note 3)
RqJA
38
Junction−to−Ambient – Steady State Min Pad (Note 4)
RqJA
180
3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface Mounted on FR4 Board using the minimum recommended pad size (30 mm2, 2 oz Cu).
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, Ref to 25°C
20
mV/
°C
Zero Gate Voltage Drain Current
IDSS
VDS = 24 V, VGS = 0 V
TJ = 25°C
1.0
mA
TJ = 85°C
10
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±12 V
±100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
0.4
0.55
1.0
V
Negative Gate Threshold
Temperature Coefficient
VGS(TH)/TJ
3.18
mV/
°C
Drain−to−Source On−Resistance
RDS(on)
VGS = 4.5 V, ID = 2.0 A
20.3
35
m
W
VGS = 2.5 V, ID = 2.0 A
25.8
45
VGS = 1.8 V, ID = 1.8 A
35.2
55
Forward Transconductance
gFS
VDS = 16 V, ID = 2.0 A
8
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1.0 MHz,
VDS = 15 V
650
pF
Output Capacitance
COSS
115.5
Reverse Transfer Capacitance
CRSS
70
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 15 V,
ID = 2.0 A
8.5
13
nC
Threshold Gate Charge
QG(TH)
0.6
Gate−to−Source Charge
QGS
0.9
Gate−to−Drain Charge
QGD
2.1
Gate Resistance
RG
3.0
W
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
td(ON)
VGS = 4.5 V, VDD = 15 V,
ID = 2.0 A, RG = 3.0 W
5
ns
Rise Time
tr
9
Turn−Off Delay Time
td(OFF)
20
Fall Time
tf
4
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
VSD
VGS = 0 V, IS = 2.0 A
TJ = 25°C
0.71
1.2
V
TJ = 85°C
0.58
Reverse Recovery Time
tRR
VGS = 0 V, dISD/dt = 100 A/ms,
IS = 1.0 A
14
35
ns
Charge Time
ta
8.0
Discharge Time
tb
6.0
Reverse Recovery Time
QRR
5.0
nC
5. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.


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