NTLJF3117P datasheet(2/8 Pages) ONSEMI

No de pièce	NTLJF3117P

Description	Power MOSFET and Schottky Diode ??0 V, ??.1 A, P?묬hannel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package

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Fabricant	ONSEMI [ON Semiconductor]

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NTLJF3117P

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SCHOTTKY DIODE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

VRRM

30

V

DC Blocking Voltage

VR

30

V

Average Rectified Forward Current

IF

2.0

A

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

Unit

Junction−to−Ambient – Steady State (Note 3)

RqJA

83

°C/W

Junction−to−Ambient – t

≤ 5 s (Note 3)

RqJA

54

Junction−to−Ambient – Steady State Min Pad (Note 4)

RqJA

177

3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).

4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 2 oz Cu.

MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−20

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

ID = −250 mA, Ref to 25°C

9.95

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VDS = −16 V, VGS = 0 V

TJ = 25°C

−1.0

mA

TJ = 85°C

−10

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±8.0 V

±100

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.4

−0.7

−1.0

V

Negative Threshold

Temperature Coefficient

VGS(TH)/TJ

2.44

mV/

°C

Drain−to−Source On−Resistance

RDS(on)

VGS = −4.5, ID = −2.0 A

75

100

m

W

VGS = −2.5, ID = −2.0 A

101

135

VGS = −1.8, ID = −1.6 A

150

200

Forward Transconductance

gFS

VDS = −5.0 V, ID = −2.0 A

3.1

S

CHARGES, CAPACITANCES AND GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1.0 MHz,

VDS = −10 V

531

pF

Output Capacitance

COSS

91

Reverse Transfer Capacitance

CRSS

56

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −10 V,

ID = −2.0 A

5.5

6.2

nC

Threshold Gate Charge

QG(TH)

0.7

Gate−to−Source Charge

QGS

1.0

Gate−to−Drain Charge

QGD

1.4

Gate Resistance

RG

8.8

W

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

td(ON)

VGS = −4.5 V, VDD = −5.0 V,

ID = −1.0 A, RG = 6.0 W

5.2

ns

Rise Time

tr

13.2

Turn−Off Delay Time

td(OFF)

13.7

Fall Time

tf

19.1

5. Pulse Test: Pulse Width

v 300 ms, Duty Cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

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