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NTLGD3502N Fiches technique(PDF) 5 Page - ON Semiconductor |
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NTLGD3502N Fiches technique(HTML) 5 Page - ON Semiconductor |
5 / 8 page NTLGD3502N http://onsemi.com 5 VDS VGS = 0 V 15 20 400 100 0 30 DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge TJ = 25°C COSS CISS CRSS RG, GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 010 25 1.0 1 0.1 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage vs. Current VGS = 0 V 10 0.9 0.6 0.4 TYPICAL MOSFET I N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) 0 2 4 6 01 2 0 2 4 6 8 12 VGS ID = 4.3 A TJ = 25°C QGD QT Qg, TOTAL GATE CHARGE (nC) 1 10 100 1 10 100 VDD = 10 V ID = 4.3 A VGS = 4.5 V td(off) td(on) tf tr 300 QGS 5 200 10 0.5 0.7 0.8 TJ = 25°C TJ = −55°C TJ = 150°C TJ = 125°C 350 50 250 150 3 Figure 11. FET Thermal Response 0.1 0.01 0.02 0.05 0.2 Single Pulse D = 0.5 t, TIME (s) 0.000001 0.00001 0.001 0.01 1 100 1000 1 0.1 0.001 0.01 0.0001 0.1 10 |
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