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NSS40600CF8T1G Fiches technique(PDF) 2 Page - ON Semiconductor |
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NSS40600CF8T1G Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 5 page NSS40600CF8T1G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mAdc, IB = 0) V(BR)CEO −40 − − Vdc Collector −Base Breakdown Voltage (IC = −0.1 mAdc, IE = 0) V(BR)CBO −40 − − Vdc Emitter −Base Breakdown Voltage (IE = −0.1 mAdc, IC = 0) V(BR)EBO −7.0 − − Vdc Collector Cutoff Current (VCB = −40 Vdc, IE = 0) ICBO − − −0.1 mAdc Emitter Cutoff Current (VEB = −6.0 Vdc) IEBO − − −0.1 mAdc ON CHARACTERISTICS DC Current Gain (Note 4) (IC = −10 mA, IC = −2.0 V) (IC = −500 mA, VCE = −2.0 V) (IC = −1.0 A, VCE = −2.0 V) (IC = −2.0 A, VCE = −2.0 V) (IC = −3.0 A, VCE = −2.0 V) hFE 250 250 220 180 150 − − 300 − − − − − − − Collector −Emitter Saturation Voltage (Note 4) (IC = −0.1 A, IB = −0.010 A) (Note 5) (IC = −1.0 A, IB = −0.100 A) (IC = −1.0 A, IB = −0.010 A) (IC = −2.0 A, IB = −0.020 A) (IC = −3.0 A, IB = −0.030 A) (IC = −4.0 A, IB = −0.400 A) VCE(sat) − − − − − − 0.007 0.045 0.080 0.150 0.180 0.160 −0.010 −0.075 −0.110 −0.200 −0.250 −0.220 V Base −Emitter Saturation Voltage (Note 4) (IC = −1.0 A, IB = −0.01 A) VBE(sat) − − −0.950 V Base −Emitter Turn−on Voltage (Note 4) (IC = −2.0 A, VCE = −3.0 V) VBE(on) − − −0.950 V Cutoff Frequency (IC = −100 mA, VCE = −5.0 V, f = 100 MHz) fT 100 − − MHz Input Capacitance (VEB = −0.5 V, f = 1.0 MHz) Cibo − − 650 pF Output Capacitance (VCB = −3.0 V, f = 1.0 MHz) Cobo − − 150 pF SWITCHING CHARACTERISTICS Delay (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) td − − 120 ns Rise (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tr − − 220 ns Storage (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) ts − − 650 ns Fall (VCC = 30 V, IC = 750 mA, IB1 = 15 mA) tf − − 240 ns 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 5. Guaranteed by design but not tested. |
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