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NSS30071MR6T1G Fiches technique(PDF) 2 Page - ON Semiconductor

No de pièce NSS30071MR6T1G
Description  30 V, 0.7 A, Low VCE(sat) NPN Transistor
Download  6 Pages
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NSS30071MR6T1G Fiches technique(HTML) 2 Page - ON Semiconductor

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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V(BR)CBO
Collector −Base Breakdown Voltage
(IC = 100 mAdc)
40
Vdc
V(BR)CEO
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc)
30
Vdc
V(BR)EBO
Emitter−Base Breakdown Voltage
(IE = 100 mAdc)
5.0
Vdc
ICBO
Collector Cutoff Current
(VCB = 25 Vdc, IE = 0 Adc)
(VCB = 25 Vdc, IE = 0 Adc, TA = 125°C)
1.0
10
mAdc
IEBO
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0 Adc)
10
mAdc
ON CHARACTERISTICS
hFE
DC Current Gain
(VCE = 3.0 Vdc, IC = 100 mAdc)
150
Vdc
VCE(sat)
Collector −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
0.25
Vdc
VCE(sat)
Collector −Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
0.4
Vdc
VBE(sat)
Base−Emitter Saturation Voltage
(IC = 700 mAdc, IB = 70 mAdc)
1.1
Vdc
VBE(on)
Collector−Emitter Saturation Voltage
(IC = 700 mAdc, VCE = 1.0 Vdc)
1.0
Vdc


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