Moteur de recherche de fiches techniques de composants électroniques |
|
NSS30071MR6T1G Fiches technique(PDF) 2 Page - ON Semiconductor |
|
NSS30071MR6T1G Fiches technique(HTML) 2 Page - ON Semiconductor |
2 / 6 page NSS30071MR6T1G http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit OFF CHARACTERISTICS V(BR)CBO Collector −Base Breakdown Voltage (IC = 100 mAdc) 40 − − Vdc V(BR)CEO Collector −Emitter Breakdown Voltage (IC = 10 mAdc) 30 − − Vdc V(BR)EBO Emitter−Base Breakdown Voltage (IE = 100 mAdc) 5.0 − − Vdc ICBO Collector Cutoff Current (VCB = 25 Vdc, IE = 0 Adc) (VCB = 25 Vdc, IE = 0 Adc, TA = 125°C) − − − − 1.0 10 mAdc IEBO Emitter Cutoff Current (VEB = 5.0 Vdc, IC = 0 Adc) − − 10 mAdc ON CHARACTERISTICS hFE DC Current Gain (VCE = 3.0 Vdc, IC = 100 mAdc) 150 − − Vdc VCE(sat) Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) − − 0.25 Vdc VCE(sat) Collector −Emitter Saturation Voltage (IC = 700 mAdc, IB = 70 mAdc) − − 0.4 Vdc VBE(sat) Base−Emitter Saturation Voltage (IC = 700 mAdc, IB = 70 mAdc) − − 1.1 Vdc VBE(on) Collector−Emitter Saturation Voltage (IC = 700 mAdc, VCE = 1.0 Vdc) − − 1.0 Vdc |
Numéro de pièce similaire - NSS30071MR6T1G |
|
Description similaire - NSS30071MR6T1G |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |