BSP100 datasheet(4/8 Pages) PHILIPS

No de pièce	BSP100

Description	N-channel enhancement mode TrenchMOS transistor

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Fabricant	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product specification

N-channel enhancement mode

BSP100

TrenchMOS

™ transistor

Fig.5. Typical output characteristics, T

j = 25 ˚C.

I

D = f(VDS); parameter VGS

Fig.6. Typical on-state resistance, T

j = 25 ˚C.

R

DS(ON) = f(ID); parameter VGS

Fig.7. Typical transfer characteristics.

I

D = f(VGS); parameter Tj

Fig.8. Typical transconductance, T

j = 25 ˚C.

g

fs = f(ID) ; parameter Tj

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C = f(Tj)

Fig.10. Gate threshold voltage.

V

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

0

1

2

3

4

5

6

7

8

9

10

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

Drain-Source Voltage, VDS (V)

Drain Current, ID (A)

3.2 V

3.4 V

4 V

Tj = 25 C

VGS = 20 V

3.6 V

3.8 V

5V

10 V

4.2 V

0

1

2

3

4

5

6

01

2345

678

9

10

Drain current, ID (A)

Transconductance, gfs (S)

Tj = 25 C

150 C

0

0.1

0.2

0.3

0.4

0.5

012

34567

89

10

Drain Current, ID (A)

Drain-Source On Resistance, RDS(on) (Ohms)

VGS =5 V

4.2 V

20V

Tj = 25 C

3.8V

4 V

3.6 V

10V

3.2 V

3.4 V

-50

0

50

100

150

0

0.5

1

1.5

2

SOT223 30V Trench

Tj / C

a

Normalised RDS(ON) = f(Tj)

0

1

2

3

4

5

6

7

8

9

10

0

0.5

1

1.5

2

2.5

3

3.5

4

4.5

5

5.5

6

Gate-source voltage, VGS (V)

Drain current, ID (A)

VDS > ID X RDS(ON)

Tj = 25 C

150 C

-60

-40

-20

0

20

40

60

80

100 120 140

Tj / C

VGS(TO) / V

4

3

2

1

0

max.

typ.

min.

February 1999

4

Rev 1.000

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