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PBSS4220V Fiches technique(PDF) 1 Page - NXP Semiconductors |
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PBSS4220V Fiches technique(HTML) 1 Page - NXP Semiconductors |
1 / 13 page 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. 1.2 Features s Low collector-emitter saturation voltage VCEsat s High collector current capability: IC and ICM s High collector current gain (hFE) at high IC s High efficiency due to less heat generation s Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications s DC-to-DC conversion s MOSFET gate driving s Motor control s Charging circuits s Low power switches (e.g. motors, fans) s Portable applications 1.4 Quick reference data [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor Rev. 01 — 6 February 2006 Product data sheet Table 1: Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 20 V IC collector current - - 2 A ICM peak collector current tp ≤ 300 µs --4 A RCEsat collector-emitter saturation resistance IC =1A; IB = 100 mA [1] - 140 175 m Ω |
Numéro de pièce similaire - PBSS4220V |
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Description similaire - PBSS4220V |
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