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PBSS4220V Fiches technique(PDF) 5 Page - NXP Semiconductors |
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PBSS4220V Fiches technique(HTML) 5 Page - NXP Semiconductors |
5 / 13 page PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 5 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 7: Characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB =20V; IE =0A - - 0.1 µA VCB =20V; IE =0A; Tj = 150 °C --50 µA ICES collector-emitter cut-off current VCE =20V; VBE = 0 V - - 0.1 µA IEBO emitter-base cut-off current VEB =5V; IC = 0 A - - 0.1 µA hFE DC current gain VCE =2V; IC = 1 mA 220 480 - VCE =2V; IC = 100 mA 220 440 - VCE =2V; IC = 500 mA [1] 220 410 - VCE =2V; IC =1A [1] 200 360 - VCE =2V; IC =2A [1] 120 220 - VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 1 mA - 35 55 mV IC = 500 mA; IB =50mA [1] -70 95 mV IC = 1 A; IB =50mA [1] - 145 180 mV IC = 1 A; IB = 100 mA [1] - 140 175 mV IC = 2 A; IB = 100 mA [1] - 275 355 mV IC = 2 A; IB = 200 mA [1] - 270 350 mV RCEsat collector-emitter saturation resistance IC = 1 A; IB = 100 mA [1] - 140 175 m Ω VBEsat base-emitter saturation voltage IC = 1 A; IB =50mA [1] - 0.95 1.1 V IC = 1 A; IB = 100 mA [1] - 1 1.2 V VBEon base-emitter turn-on voltage VCE =5V; IC = 1 A - 0.8 1.1 V td delay time IC = 1 A; IBon =50mA; IBoff = −50 mA -9 -ns tr rise time - 29 - ns ton turn-on time - 38 - ns ts storage time - 200 - ns tf fall time - 40 - ns toff turn-off time - 240 - ns fT transition frequency VCE =10V; IC =50mA; f = 100 MHz - 210 - MHz Cc collector capacitance VCB =10V; IE =ie =0A; f = 1 MHz -11 - pF |
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