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PBSS4220V Fiches technique(PDF) 4 Page - NXP Semiconductors |
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PBSS4220V Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 13 page PBSS4220V_1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Product data sheet Rev. 01 — 6 February 2006 4 of 13 Philips Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. [4] Reflow soldering is the only recommended soldering method. Table 6: Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] [4] - - 410 K/W [2] [4] - - 250 K/W [3] [4] - - 140 K/W Rth(j-sp) thermal resistance from junction to solder point --80 K/W FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa425 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 0 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 |
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