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DIM600NSM45-F000 Fiches technique(PDF) 6 Page - Dynex Semiconductor

No de pièce DIM600NSM45-F000
Description  Single Switch IGBT Module
Download  8 Pages
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Fabricant  DYNEX [Dynex Semiconductor]
Site Internet  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM600NSM45-F000 Fiches technique(HTML) 6 Page - Dynex Semiconductor

  DIM600NSM45-F000 Datasheet HTML 1Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 2Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 3Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 4Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 5Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 6Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 7Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 8Page - Dynex Semiconductor  
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DIM600NSM45-F000
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This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
0
200
400
600
800
1000
1200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
Forward voltage, VF - (V)
25ºC
125ºC
VF is measured at power busbars
and not the auxiliary terminals
0
200
400
600
800
1000
1200
1400
4000
4200
4400
4600
4800
5000
Collector emitter voltage, Vce (V)
Tcase = 125'C
Vge = +/-15V
Rg(off) =11ohms
Module
Chip
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
1
10
100
0.001
0.01
0.1
1
10
Pulse time, tp - (s)
Rth IGBT
Rth diode
0
100
200
300
400
500
600
700
800
900
1000
0
1000
2000
3000
4000
5000
Reverse voltage, VR -(V)
Tj = 125º C
1
2
3
4
IG B T
R i ( °C /k W )
0 . 4 6
2 .1 0
3 .6 4
5 .8 6
ti ( m s )
0 . 1 7
8 .0 8
5 1 .9 2
2 8 0 . 5
D io d e
R i ( °C /k W )
0 . 9 0
4 .2 2
7 .2 8
1 1 .7 1
ti ( m s )
0 . 1 7
8 .0 8
5 1 .9 2
2 8 0 . 5
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance


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