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DIM600NSM45-F000 Fiches technique(PDF) 5 Page - Dynex Semiconductor

No de pièce DIM600NSM45-F000
Description  Single Switch IGBT Module
Download  8 Pages
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Fabricant  DYNEX [Dynex Semiconductor]
Site Internet  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM600NSM45-F000 Fiches technique(HTML) 5 Page - Dynex Semiconductor

  DIM600NSM45-F000 Datasheet HTML 1Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 2Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 3Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 4Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 5Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 6Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 7Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 8Page - Dynex Semiconductor  
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DIM600NSM45-F000
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
5/8
www.dynexsemi.com
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0.0
0.5
1.0
1.5
2.0
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3.0
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4.0
4.5
Collector-emitter voltage, Vce - (V)
Vge=10V
Vge=12V
Vge=15V
Vge=20V
Common emitter
Tcase = 25°C
VCE is measured at power busbars
and not the auxiliary terminals
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600
800
1000
1200
0.0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Vge=10V
Vge=12V
Vge=15V
Vge=20V
Common emitter
Tcase = 125°C
VCE is measured at power busbars
and not the auxiliary terminals
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
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0
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600
Collector Current - Ic (A)
Eon (mJ)
Eoff (mJ)
Erec (mJ)
Conditions:
VCC = 2250V
Tcase = 125°C
Rg = 4.7Ohms
Cge =110nF
Vge =+/- 15V
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Gate Resistance - Rg (Ohms)
Eon (mJ)
Eoff (mJ)
Erec (mJ)
Conditions:
VCC = 2250V
Ic = 600A
Tcase = 125°C
Cge =110nF
Vge = +/- 15V
Fig.5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance


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