Moteur de recherche de fiches techniques de composants électroniques
  French  ▼

Delete All
ON OFF
ALLDATASHEET.FR

X  

Preview PDF Download HTML

DIM600NSM45-F000 Fiches technique(PDF) 4 Page - Dynex Semiconductor

No de pièce DIM600NSM45-F000
Description  Single Switch IGBT Module
Download  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  DYNEX [Dynex Semiconductor]
Site Internet  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DIM600NSM45-F000 Fiches technique(HTML) 4 Page - Dynex Semiconductor

  DIM600NSM45-F000 Datasheet HTML 1Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 2Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 3Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 4Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 5Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 6Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 7Page - Dynex Semiconductor DIM600NSM45-F000 Datasheet HTML 8Page - Dynex Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 4 / 8 page
background image
DIM600NSM45-F000
4/8:
This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC =600A
5.0
us
tf
Fall time
VGE =±15V
250
ns
EOFF
Turn-off energy loss
VCE =2250V
1500
mJ
td(on)
Turn-on delay time
RG(ON) =4.7
RG(OFF)=11
850
ns
tr
Rise time
Cge =110nF
220
ns
EON
Turn-on energy loss
L ~200nH
1800
mJ
Qg
Gate charge
20
uC
Qrr
Diode reverse recovery
charge
IF =600A,VCE =2250V,
475
uC
Irr
Diode reverse recovery
current
dIF/dt =3000A/us
700
A
Erec
Diode reverse recovery
energy
600
mJ
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
Min
Typ.
Max
Units
td(off)
Turn-off delay time
IC =600A
5.2
us
tf
Fall time
VGE =±15V
250
ns
EOFF
Turn-off energy loss
VCE =2250V
1700
mJ
td(on)
Turn-on delay time
RG(ON) =4.7
RG(OFF)=11
800
ns
tr
Rise time
Cge =110nF
220
ns
EON
Turn-on energy loss
L ~200nH
2700
mJ
Qrr
Diode reverse recovery
charge
IF =600A,VCE =2250V,
850
uC
Irr
Diode reverse recovery
current
dIF/dt =3000A/us
820
A
Erec
Diode reverse recovery
energy
1050
mJ


Html Pages

1  2  3  4  5  6  7  8 


Fiches technique Télécharger

Go To PDF Page

Numéro de composants électroniques

No de pièceDescriptionHtml ViewFabricant
DIM600BSS12-A000 Single Switch IGBT Module 1  2  3  4  5  More Dynex Semiconductor
DIM200WBS12-A000 Single Switch IGBT Module 1  2  3  4  5  More Dynex Semiconductor
DIM600DDM17-A000 Dual Switch IGBT Module 1  2  3  4  5  More Dynex Semiconductor
DIM200WLS12-A000 IGBT Chopper Module - Lower Arm Control 1  2  3  4  5  More Dynex Semiconductor
MS5F5617 IGBT module 1  2  3  4  5  More Fuji Electric
MS5F6015 IGBT MODULE 1  2  3  4  5  More Fuji Electric
NLAS9431 Low Voltage Single Supply Dual DPDT Analog Switch 1  2  3  4  5  More ON Semiconductor
MS5F6058 IGBT MODULE 1  2  3  4  5  More Fuji Electric
AD8153 Single Buffered Switch 3.2 Gbps 1  2  3  4  5  More Analog Devices
NLAST9431 Low Voltage Single Supply Dual DPDT Analog Switch 1  2  3  4  5  More ON Semiconductor

Lien URL




Politique de confidentialité
ALLDATASHEET.FR
ALLDATASHEET vous a-t-il été utile ?  [ DONATE ] 

À propos de Alldatasheet   |   Publicité   |   Contactez-nous   |   Politique de confidentialité   |   Echange de liens   |   Fabricants
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn