Moteur de recherche de fiches techniques de composants électroniques |
|
MSD42SWT1 Fiches technique(PDF) 1 Page - ON Semiconductor |
|
MSD42SWT1 Fiches technique(HTML) 1 Page - ON Semiconductor |
1 / 2 page © Semiconductor Components Industries, LLC, 2006 January, 2006 − Rev. 1 1 Publication Order Number: MSD42SWT1/D MSD42SWT1 Preferred Device NPN Silicon General Purpose High Voltage Transistor This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features • Pb−Free Package is Available MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 300 Vdc Collector-Emitter Voltage V(BR)CEO 300 Vdc Emitter-Base Voltage V(BR)EBO 6.0 Vdc Collector Current − Continuous IC 150 mAdc THERMAL CHARACTERISTICS Rating Symbol Max Unit Power Dissipation (Note 1) PD 150 mW Junction Temperature TJ 150 °C Storage Temperature Range Tstg −55 to +150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 300 − Vdc Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 300 − Vdc Emitter-Base Breakdown Voltage (IE = 100 mAdc, IE = 0) V(BR)EBO 6.0 − Vdc Collector-Base Cutoff Current (VCB = 300 Vdc, IE = 0) ICBO − 0.1 mA Emitter−Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) IEBO − 0.1 mA DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 1.0 mAdc) (VCE = 10 Vdc, IC = 30 mAdc) hFE1 hFE2 25 40 200 − − Collector-Emitter Saturation Voltage (Note 2) (IC = 200 mAdc, IB = 2.0 mAdc) VCE(sat) − 0.5 Vdc 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%. SC−70 (SOT−323) CASE 419 STYLE 3 MARKING DIAGRAM 3 1 2 Device Package Shipping† ORDERING INFORMATION MSD42SWT1 SC−70/SOT−323 3000/Tape & Reel D4 = Device Code M = Date Code* G = Pb−Free Package Preferred devices are recommended choices for future use and best overall value. COLLECTOR 3 1 BASE 2 EMITTER http://onsemi.com MSD42SWT1G SC−70/SOT−323 (Pb−Free) 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. D4 M G G 1 (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. |
Numéro de pièce similaire - MSD42SWT1 |
|
Description similaire - MSD42SWT1 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |