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MSD42SWT1 Fiches technique(PDF) 1 Page - ON Semiconductor

No de pièce MSD42SWT1
Description  NPN Silicon General Purpose High Voltage Transistor
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Fabricant  ONSEMI [ON Semiconductor]
Site Internet  http://www.onsemi.com
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MSD42SWT1 Fiches technique(HTML) 1 Page - ON Semiconductor

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© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 1
1
Publication Order Number:
MSD42SWT1/D
MSD42SWT1
Preferred Device
NPN Silicon General
Purpose High Voltage
Transistor
This NPN Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
300
Vdc
Collector-Emitter Voltage
V(BR)CEO
300
Vdc
Emitter-Base Voltage
V(BR)EBO
6.0
Vdc
Collector Current − Continuous
IC
150
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation (Note 1)
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may
be affected.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
300
Vdc
Collector-Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
300
Vdc
Emitter-Base Breakdown Voltage
(IE = 100 mAdc, IE = 0)
V(BR)EBO
6.0
Vdc
Collector-Base Cutoff Current
(VCB = 300 Vdc, IE = 0)
ICBO
0.1
mA
Emitter−Base Cutoff Current
(VEB = 6.0 Vdc, IB = 0)
IEBO
0.1
mA
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 1.0 mAdc)
(VCE = 10 Vdc, IC = 30 mAdc)
hFE1
hFE2
25
40
200
Collector-Emitter Saturation Voltage
(Note 2) (IC = 200 mAdc,
IB = 2.0 mAdc)
VCE(sat)
0.5
Vdc
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum
recommended footprint.
2. Pulse Test: Pulse Width
≤ 300 ms, D.C. ≤ 2%.
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
3
1
2
Device
Package
Shipping
ORDERING INFORMATION
MSD42SWT1
SC−70/SOT−323
3000/Tape & Reel
D4
= Device Code
M
= Date Code*
G
= Pb−Free Package
Preferred devices are recommended choices for future use
and best overall value.
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
MSD42SWT1G SC−70/SOT−323
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
D4 M
G
G
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.


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