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2SC5658M3T5G Fiches technique(PDF) 2 Page - Vaishali Semiconductor

No de pièce 2SC5658M3T5G
Description  NPN Silicon General Purpose Amplifier Transistor
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Fabricant  VAISH [Vaishali Semiconductor]
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2SC5658M3T5G Fiches technique(HTML) 2 Page - Vaishali Semiconductor

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ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0)
V(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc
Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0)
V(BR)EBO
5.0
Vdc
Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)
ICBO
0.5
mA
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)
IEBO
0.5
mA
Collector-Emitter Saturation Voltage (Note 2)
(IC = 60 mAdc, IB = 5.0 mAdc)
VCE(sat)
0.4
Vdc
DC Current Gain (Note 2)
(VCE = 6.0 Vdc, IC = 1.0 mAdc)
hFE
120
560
Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)
fT
180
MHz
Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz)
COB
2.0
pF
2. Pulse Test: Pulse Width
≤ 300 ms, D.C. ≤ 2%.


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