IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665

6,534,343

IXTQ 23N60Q

Fig. 11. Capacitance

100

1000

10000

0

5

10

15

20

25

30

35

40

V

Ciss

Coss

Crss

f = 1MHz

Fig. 10. Gate Charge

0

2

4

6

8

10

0

20406080

100

Q

Fig. 7. Input Adm ittance

0

5

10

15

20

25

30

35

3.5

4

4.555.5

66.5

V

25ºC

-40ºC

Fig. 12. Maxim um Transient Therm al

Resistance

0.01

0.1

1

1

10

100

1000

Pulse Width - milliseconds

Fig. 8. Transconductance

0

10

20

30

40

50

0

1020

304050

60

I

25ºC

125ºC

Fig. 9. Source Current vs. Source-To-

Drain Voltage

0

10

20

30

40

50

60

70

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

V