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ZX5T869Z Fiches technique(PDF) 2 Page - Zetex Semiconductors |
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ZX5T869Z Fiches technique(HTML) 2 Page - Zetex Semiconductors |
2 / 6 page ZX5T869Z SEMICO NDUC TORS ISSUE 2 - JUNE 2005 2 PARAMETER SYMBOL LIMIT UNIT Collector-base voltage BVCBO 60 V Collector-emitter voltage BVCEO 25 V Emitter-base voltage BVEBO 7V Continuous collector current (a) IC 5.5 A Peak pulse current ICM 20 A Power dissipation at TA=25°C (a) Linear derating factor PD 1.5 12 W mW/°C Power dissipation at TA=25°C (b) Linear derating factor PD 2.1 16.8 W mW/°C Operating and storage temperature range Tj,Tstg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Junction to ambient (a) R JA 83 °C/W Junction to ambient (b) R JA 60 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. THERMAL RESISTANCE |
Numéro de pièce similaire - ZX5T869Z |
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Description similaire - ZX5T869Z |
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