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IRG4ZH71KD Fiches technique(PDF) 2 Page - International Rectifier |
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IRG4ZH71KD Fiches technique(HTML) 2 Page - International Rectifier |
2 / 10 page IRG4ZH71KD 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) — 380 570 IC = 42A Qge Gate - Emitter Charge (turn-on) — 48 72 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) — 120 180 VGE = 15V td(on) Turn-On Delay Time — 80 — tr Rise Time — 45 — TJ = 25°C td(off) Turn-Off Delay Time — 215 320 IC = 42A, VCC = 800V tf Fall Time — 220 330 VGE = 15V, RG = 5.0Ω Eon Turn-On Switching Loss — 3.64 — Energy losses include "tail" Eoff Turn-Off Switching Loss — 3.17 — mJ and diode reverse recovery Ets Total Switching Loss — 6.81 9.8 See Fig. 9,10,18 tsc Short Circuit Withstand Time 10 — — µs VCC = 720V, TJ = 125°C VGE = 15V, RG = 5.0Ω td(on) Turn-On Delay Time — 91 — TJ = 150°C, See Fig. 10,11,18 tr Rise Time — 48 — IC = 42A, VCC = 800V td(off) Turn-Off Delay Time — 430 — VGE = 15V, RG = 5.0Ω, tf Fall Time — 400 — Energy losses include "tail" Ets Total Switching Loss — 14.6 — mJ and diode reverse recovery LE Internal Emitter Inductance — 2.0 — nH Measured 5mm from package Cies Input Capacitance — 5620 — VGE = 0V Coes Output Capacitance — 400 — pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance — 94 — ƒ = 1.0MHz trr Diode Reverse Recovery Time — 107 160 ns TJ = 25°C See Fig. — 160 240 TJ = 125°C 14 IF = 42A Irr Diode Peak Reverse Recovery Current — 10 15 A TJ = 25°C See Fig. —16 24 TJ = 125°C 15 VR = 200V Qrr Diode Reverse Recovery Charge — 680 1020 nC TJ = 25°C See Fig. — 1400 2100 TJ = 125°C 16 di/dt = 200A/µs di(rec)M/dt Diode Peak Rate of Fall of Recovery — 250 — A/µs TJ = 25°C See Fig. During tb — 320 — TJ = 125°C 17 Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.26 — V/°C VGE = 0V, IC = 4.0mA VCE(on) Collector-to-Emitter Saturation Voltage — 2.89 3.9 IC = 42A VGE = 15V — 3.73 — V IC = 78A See Fig. 2, 5 — 2.55 — IC = 42A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -11 — mV/°C VCE = VGE, IC = 1.5mA gfe Forward Transconductance 23 34 — S VCE = 50V, IC = 42A ICES Zero Gate Voltage Collector Current — — 500 µA VGE = 0V, VCE = 1200V —— 10 mA VGE = 0V, VCE = 1200V, TJ = 150°C VFM Diode Forward Voltage Drop — 2.45 3.7 V IC = 42A See Fig. 13 — 2.40 — IC = 42A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) |
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