IRF720A datasheet(2/7 Pages) FAIRCHILD

No de pièce	IRF720A

Description	Advanced Power MOSFET (400V, 1.8ohm, 3.3A)

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Fabricant	FAIRCHILD [Fairchild Semiconductor]

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IRF720A

400

--

2.0

--

0.54

--

60

27

12

17

51

18

19

2.7

11.1

--

4.0

100

-100

10

100

1.8

--

500

70

33

35

45

110

45

26

--

2.25

385

--

230

1.16

3.3

13

1.5

--

Notes;

(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature

(2) L=40mH, I

AS=3.3A, VDD=50V, RG=27Ω, Starting TJ =25°C

(3) I

SD ≤ 3.3A, di/dt ≤ 110A/µs, VDD ≤ BVDSS , Starting TJ =25°C

(4) Pulse Test: Pulse Width = 250

µs, Duty Cycle ≤ 2%

(5) Essentially Independent of Operating Temperature

1&+$11(/

32:(5 026)(7

Electrical Characteristics (T

C=25°C unless otherwise specified)

Drain-Source Breakdown Voltage

Breakdown Voltage Temp. Coeff.

Gate Threshold Voltage

Gate-Source Leakage , Forward

Gate-Source Leakage , Reverse

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

Static Drain-Source

On-State Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain ( Miller ) Charge

gfs

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

BVDSS

∆BV/∆T

J

VGS(th)

RDS(on)

IGSS

IDSS

V

V/

°C

V

nA

µA

Ω

pF

ns

nC

--

VGS=0V,ID=250µA

ID=250µA

See Fig 7

VDS=5V,ID=250µA

VGS=30V

VGS=-30V

VDS=400V

VDS=320V,TC=125°C

VGS=10V,ID=1.65A

(4)

VDS=50V,ID=1.65A

(4)

VDD=200V,ID=3.3A,

RG=18Ω

See Fig 13

(4) (5)

VDS=320V,VGS=10V,

ID=3.3A

See Fig 6 & Fig 12 (4) (5)

Drain-to-Source Leakage Current

VGS=0V,VDS=25V,f =1MHz

See Fig 5

Source-Drain Diode Ratings and Characteristics

Continuous Source Current

Pulsed-Source Current

(1)

Diode Forward Voltage

(4)

Reverse Recovery Time

Reverse Recovery Charge

IS

ISM

VSD

trr

Qrr

Characteristic

Symbol

Max. Units

Typ.

Min.

Test Condition

--

A

V

ns

µC

Integral reverse pn-diode

in the MOSFET

TJ=25°C,IS=3.3A,VGS=0V

TJ=25°C,IF=3.3A

diF/dt=100A/µs

(4)

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Description similaire - IRF720A

Fabricant	No de pièce	Fiches technique	Description
Intersil Corporation	IRF720	54Kb / 7P	3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET
International Rectifier	IRFR320	177Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=3.1A)
	IRFI720G	170Kb / 6P	Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=2.6A)
	IRFD320	478Kb / 8P	Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=0.49A)
	IRF720SPBF	974Kb / 8P	HEXFET POWER MOSFET (VDSS = 400V , RDS(on) = 1.8廓 , ID = 3.3A )
Fairchild Semiconductor	IRF710A	226Kb / 7P	Advanced Power MOSFET (400V, 3.6ohm, 2A)
International Rectifier	JANTX2N6792	234Kb / 6P	POWER MOSFET N-CHANNEL(BVss=400V, Rds(on)=1.8ohm, Id=2.0A)
Will Semiconductor Ltd.	WPMD2084	439Kb / 7P	Dual P-Channel, -20V, -3.3A, Power MOSFET
Intersil Corporation	IRF610	55Kb / 7P	3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET
Intersil Corporation	IRF320	67Kb / 7P	2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

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