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FMM6G50US60 Fiches technique(PDF) 2 Page - Fairchild Semiconductor |
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FMM6G50US60 Fiches technique(HTML) 2 Page - Fairchild Semiconductor |
2 / 9 page ©2003 Fairchild Semiconductor Corporation FMM6G50US60 Rev. A Electrical Characteristics of IGBT @ Inverter T C = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V ∆BVCES/ ∆TJ Temperature Coeff. of Breakdown Voltage VGE = 0V, IC = 1mA -- 0.6 -- V/ °C ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA IGES Gate - Emitter Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA On Characteristics VGE(th) Gate - Emitter Threshold Voltage IC = 50mA, VCE = VGE 5.0 6.5 8.5 V VCE(sat) Collector to Emitter Saturation Voltage IC =50A, VGE = 15V -- 2.1 2.7 V Dynamic Characteristics Cies Input Capacitance VCE = 30V, VGE = 0V, f = 1MHz -- 3565 -- pF Coes Output Capacitance -- 286 -- pF Cres Reverse Transfer Capacitance -- 60 -- pF Switching Characteristics td(on) Turn-On Delay Time VCC = 300 V, IC = 50A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 25°C -- 90 200 ns tr Rise Time -- 60 150 ns td(off) Turn-Off Delay Time -- 110 200 ns tf Fall Time -- 120 250 ns Eon Turn-On Switching Loss -- 1.08 -- mJ Eoff Turn-Off Switching Loss -- 0.95 -- mJ td(on) Turn-On Delay Time VCC = 300 V, IC = 50A, RG = 10Ω, VGE = 15V, Inductive Load, TC = 125°C -- 80 200 ns tr Rise Time -- 60 150 ns td(off) Turn-Off Delay Time -- 110 200 ns tf Fall Time -- 210 400 ns Eon Turn-On Switching Loss -- 1.28 -- mJ Eoff Turn-Off Switching Loss -- 1.5 -- mJ Tsc Short Circuit Withstand Time VCC = 300 V, VGE = 15V @ TC = 100°C 10 -- -- us Qg Total Gate Charge VCE = 300 V, IC = 50A, VGE = 15V -- 150 300 nC Qge Gate-Emitter Charge -- 35 70 nC Qgc Gate-Collector Charge -- 60 120 nC |
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Description similaire - FMM6G50US60 |
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