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BF909WR Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BF909WR Fiches technique(HTML) 4 Page - NXP Semiconductors |
4 / 12 page 1997 Sep 05 4 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF909WR THERMAL CHARACTERISTICS Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj =25 °C; unless otherwise specified. Note 1. RG1 connects gate 1 to VGG =5V. DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VDS =5V; VG2-S = 4 V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 350 K/W Rth j-s thermal resistance from junction to soldering point Ts =91 °C; note 2 210 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V(BR)G1-SS gate 1-source breakdown voltage VG2-S =VDS = 0; IG1-S = 10 mA 6 15 V V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-S = 10 mA 6 15 V V(F)S-G1 forward source-gate 1 voltage VG2-S =VDS = 0; IS-G1 = 10 mA 0.5 1.5 V V(F)S-G2 forward source-gate 2 voltage VG1-S =VDS = 0; IS-G2 = 10 mA 0.5 1.5 V VG1-S(th) gate 1-source threshold voltage VG2-S =4V; VDS =5V; ID =20 µA 0.3 1 V VG2-S(th) gate 2-source threshold voltage VG1-S =VDS =5V; ID =20 µA 0.3 1.2 V IDSX drain-source current VG2-S =4V; VDS =5V; RG1 = 120 kΩ; note 1 12 20 mA IG1-SS gate 1 cut-off current VG2-S =VDS = 0; VG1-S =5V − 50 nA IG2-SS gate 2 cut-off current VG1-S =VDS = 0; VG2-S =5V − 50 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj =25 °C 364350mS Cig1-s input capacitance at gate 1 f = 1 MHz − 3.6 4.3 pF Cig2-s input capacitance at gate 2 f = 1 MHz − 2.3 3 pF Cos drain-source capacitance f = 1 MHz − 2.3 3 pF Crs reverse transfer capacitance f = 1 MHz − 30 50 fF F noise figure f = 800 MHz; GS =GSopt; BS =BSopt − 2 2.8 dB |
Numéro de pièce similaire - BF909WR |
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Description similaire - BF909WR |
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