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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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BF908 Fiches technique(PDF) 4 Page - NXP Semiconductors |
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BF908 Fiches technique(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page  1996 Jul 30 4 Philips Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R THERMAL CHARACTERISTICS Note 1. Device mounted on a printed-circuit board. STATIC CHARACTERISTICS Tj =25 °C; unless otherwise specified. DYNAMIC CHARACTERISTICS Common source; Tamb =25 °C; VDS =8V; VG2-S =4V; ID = 15 mA; unless otherwise specified. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 BF908 500 K/W BF908R 550 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ±V(BR)G1-SS gate 1-source breakdown voltage VG2-S =VDS = 0; IG1-S =10mA 8 − 20 V ±V(BR)G2-SS gate 2-source breakdown voltage VG1-S =VDS = 0; IG2-S =10mA 8 − 20 V −V(P)G1-S gate 1-source cut-off voltage VG2-S =4V; VDS =8V; ID =20 µA −− 2V −V(P)G2-S gate 2-source cut-off voltage VG1-S =4V; VDS =8V; ID =20 µA −− 1.5 V IDSS drain-source current VG2-S =4V; VDS =8V; VG1-S = 0 3 1527mA ±IG1-SS gate 1 cut-off current VG2-S =VDS = 0; VG1-S =5V −− 50 nA ±IG2-SS gate 2 cut-off current VG1-S =VDS = 0; VG2-S =5V −− 50 nA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT y fs forward transfer admittance pulsed; Tj =25 °C; f = 1 MHz 36 43 50 mS Cig1-s input capacitance at gate 1 f = 1 MHz 2.4 3.1 4 pF Cig2-s input capacitance at gate 2 f = 1 MHz 1.2 1.8 2.5 pF Cos output capacitance f = 1 MHz 1.2 1.7 2.2 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 fF F noise figure f = 200 MHz; GS = 2 mS; BS =BSopt − 0.6 1.2 dB f = 800 MHz; GS =GSopt; BS =BSopt − 1.5 2.5 dB |
Numéro de pièce similaire - BF908 |
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Description similaire - BF908 |
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