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BF820W Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BF820W Fiches technique(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1997 Sep 03 3 Philips Semiconductors Product specification NPN high-voltage transistors BF820W; BF822W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BF820W − 300 V BF822W − 250 V VCEO collector-emitter voltage open base BF820W − 300 V BF822W − 250 V VEBO emitter-base voltage open collector − 5V IC collector current (DC) − 50 mA ICM peak collector current − 100 mA IBM peak base current − 50 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 625 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 200 V − 10 nA IE = 0; VCB = 200 V; Tj = 150 °C − 10 µA IEBO emitter cut-off current IC = 0; VEB =5V − 50 nA hFE DC current gain IC = 25 mA; VCE =20V 50 − VCEsat collector-emitter saturation voltage IC = 30 mA; IB = 5mA; note 1 − 600 mV Cre feedback capacitance IC =ic = 0; VCB = 30 V; f = 1 MHz − 1.6 pF fT transition frequency IC = 10 mA; VCE = 10 V; f = 100 MHz 60 − MHz |
Numéro de pièce similaire - BF820W |
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Description similaire - BF820W |
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