Moteur de recherche de fiches techniques de composants électroniques |
|
IRF640T Fiches technique(PDF) 1 Page - STMicroelectronics |
|
IRF640T Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 12 page October 2006 Rev 1 1/12 12 ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances Description This Power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Applications ■ Switching application Internal schematic diagram General features Type VDSS RDS(on) ID IRF640T 200V <0.16 Ω 15A 1 2 3 TO-220 IRF640T N-channel 200V - 0.15 Ω - 15A - TO-220 MESH OVERLAY™ Power MOSFET www.st.com Order codes Part number Marking Package Packaging IRF640T IRF640T TO-220 Tube |
Numéro de pièce similaire - IRF640T |
|
Description similaire - IRF640T |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |